PART |
Description |
Maker |
LRI512 7686 |
From old datasheet system Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.
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STMICROELECTRONICS[STMicroelectronics]
|
SL1222101-A SL1222101-B |
TRANS,WALL,24VDC/400mA,F2, 2.1mm x 5.5mm,UL 50/cs 电路保护热敏电阻 TRANS,WALL,24VDC/500mA,F1 2.1mmX5.5mm,UL TRANS,WALL,18VDC/1A,F2,2.5X5.5 ,2 PRNG AC,LIN NON-REG
|
Ametherm, Inc.
|
MC33161P MC33161D |
24 mm Circular Inlay R/O 0-RFIDN 0 to 0 Tag-it(TM) HF-I Standard Transponder Inlays CD 0-RFIDN
|
Motorola, Inc.
|
WT1812ML450A WT1812ML120A LITTELFUSEINC.-WT1812ML2 |
TRANS NPN W/RES 60 HFE MINI 3P Multilayer Ceramic Transient Voltage Suppressor Standard Capacity 多层陶瓷瞬态电压抑制器标准容量
|
Littelfuse, Inc.
|
PV15-24S PV15-15S PV15-5S PV15-48S |
TRANS,WALL,9VDC/200mA,F1 2.1mm X 55mm,UL/CSA(CTR-NEG) TRANS,WALL,REG,6VDC/1A 2.1mmX5.5mm,CTR POS,UL/CSA TRANS,WALL,9VDC/200mA, M2,3.5mm,UL/CSA TRANS,WALL,9VDC/300mA,F2, 2.5mmX5.5mm,UL/ULC TRANS,WALL,9VDC/300mA,F2 2.1mm X 5.5mm,UL/CSA
|
Astrodyne, Inc.
|
JR13WRR-4 JR13WCCR-4 JR13WRC-3SC JR13WRC-3S JR13WR |
TRANS PREBIASED DUAL COMP SOT363 TRANS PREBIASED PNP SOT323 DIODE ZENER SINGLE 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOD-323 3K/REEL DIODE SWITCHING SINGLE 75V 250mA-Io 400mW 4ns-trr SOD-123 3K/REEL High-performance water-proof circular connector JR-W connector 高性能防水圆形连接JR钨接 DIODE ZENER SINGLE 500mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOD-123 3K/REEL 高性能防水圆形连接JR钨接 DIODE ZENER SINGLE 200mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOD-323 3K/REEL 高性能防水圆形连接JR钨接 TRANS PREBIASED NPN 200MW SOT-23 高性能防水圆形连接JR钨接 TRANS PREBIASED NPN 150MW SOT523 高性能防水圆形连接JR钨接 TRANS PREBIASED NPN 200MW SOT23 高性能防水圆形连接JR钨接 DIODE ZENER SINGLE 300mW 5.1Vz 5mA-Izt 0.0588 2uA-Ir 2 SOT-23 3K/REEL 高性能防水圆形连接JR钨接 DIODE ZENER SINGLE 500mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOD-123 3K/REEL 高性能防水圆形连接JR钨接 DIODE SWITCHING SINGLE 75V 250mA-Io 200mW 4ns-trr SOD-323 3K/REEL 高性能防水圆形连接JR钨接 RECTIFIER STANDARD SINGLE 1A 600V 600 30A-ifsm 5uA-ir 1V-vf DO-41 1K/BULK 高性能防水圆形连接JR钨接 RECTIFIER STANDARD SINGLE 1A 600V 600 30A-ifsm 5uA-ir 1V-vf DO-41 5K/AMMO 高性能防水圆形连接JR钨接 HEATPAD TO-220 .006 K4 高性能防水圆形连接JR钨接
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http:// HIROSE[Hirose Electric] Hirose Electric USA, INC. HIROSE ELECTRIC Co., Ltd.
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MK48S80X20/20 MK48S80X25/20 |
8K X 8 CACHE TAG SRAM, 20 ns, PDSO28 0.300 INCH, PLASTIC, SOJ-28 8K X 8 CACHE TAG SRAM, 25 ns, PDSO28
|
ST Microelectronics STMICROELECTRONICS
|
MRF6522-60 MRF6522-70 |
Trans RF MOSFET N-CH 60V 7A 3-Pin Case 360B-04 Trans RF MOSFET N-CH 65V 7A 3-Pin NI-600
|
New Jersey Semiconductors
|
SL1010003 SL1010003-B |
TRANS,WALL,9VDC/800mA,F2 2.1mm x 5.5mm,UL/CUL TRANS,WALL,REG LIN,9VDC/500mA 2.1mmX5.5mm,CTR POS,UL/CSA
|
Ametherm, Inc
|
IDT6116 IDT6116LA IDT6116LA120D IDT6116LA120DB IDT |
Enhanced JFET Precision Operational Amplifier 8-PDIP 0 to 70 的CMOS静态RAM 16K的(2K × 8位) Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-PDIP -40 to 85 2K X 8 STANDARD SRAM, 20 ns, PDIP24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24 Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-PDIP -40 to 85 2K X 8 STANDARD SRAM, 35 ns, PDIP24 TRANS NPN 80VCEO 1A MT-3 的CMOS静态RAM 16K的(2K × 8位) Dual Enhanced JFET Precision Operational Amplifier 8-SOIC -40 to 85 的CMOS静态RAM 16K的(2K × 8位) CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 120 ns, CDIP24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, CDIP24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, CDIP24 TRANS NPN LF 50VCEO .1A SS-MINI 的CMOS静态RAM 16K的(2K × 8位) 20 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 的CMOS静态RAM 16K的(2K × 8位) Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85 2K X 8 STANDARD SRAM, 45 ns, CDIP24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24 Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-PDIP -40 to 85 2K X 8 STANDARD SRAM, 45 ns, PDIP24 CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, CDIP24 Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-SOIC 0 to 70 的CMOS静态RAM 16K的(2K × 8位) CMOS STATIC RAM 16K (2K x 8 BIT) 的CMOS静态RAM 16K的(2K × 8位) Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-PDIP 0 to 70 Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SO 0 to 70 Enhanced-JFET Precision Operational Amplifier 8-SOIC 0 to 70 Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70 CABLE SMA-RA/SMA-RA 36 RG-58 Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-PDIP 0 to 70 Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SO 0 to 70 CABLE SMA/BNC 12 RG-142 Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SOIC -40 to 85 Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-PDIP 0 to 70 Enhanced JFET Precision Operational Amplifier 8-SOIC 0 to 70 Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC -40 to 85 Dual Enhanced JFET Low-Power Precision Operational Amplifier 8-SOIC 0 to 70
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INTEGRATED DEVICE TECHNOLOGY INC AME, Inc. Integrated Device Technology, Inc. IDT[Integrated Device Technology]
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BCY58-VII BCY58A BCY59-8 BCY59-VII BCY59-VIII BCY5 |
Trans GP BJT NPN 32V 0.2A 3-Pin TO-18 Trans GP BJT NPN 45V 0.2A 3-Pin TO-18
|
New Jersey Semiconductor
|
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